- Folsom, California, United States
- On-site
- Full-time
- $181K–$415K per year
- 6+ years
Provide critical technology support for the design and development of advanced HBM DRAM products, bridging internal design teams, foundries, and technology development groups.
Compensation
$181,000.00 - $415,000.00 a year
Responsibilities
- Provide critical technology support for the design and development of advanced HBM DRAM products
- Serve as a bridge between internal design teams, foundries, and technology development groups
- Translate advanced process capabilities into scalable, high‑performance architectures
- Support the design and deployment of AI‑enabled solutions that improve efficiency and decision‑making
Requirements
- Bachelor's in Electrical Engineering
- Master's in Electrical Engineering
- PhD in Electrical Engineering
- Bachelor's in Computer Engineering
- Master's in Computer Engineering