Lead early-stage technology investigation and process integration for next-generation DRAM architectures.
Compensation
$159,000.00 - $271,000.00 a year
Responsibilities
Lead pathfinding investigations of next-generation DRAM concepts, materials, process architectures, and advanced patterning solutions, including High-NA EUV
Develop and integrate process flows across lithography, dry etch, thin films, CMP, metrology, device engineering, and manufacturing while balancing performance, yield, reliability, manufacturability, and cost
Design and implement DOE and technology-learning experiments, using statistical and AI-assisted analytics to evaluate electrical, defectivity, metrology, reliability, and yield data
Collaborate with NY CREATES, equipment suppliers, research partners, and Micron teams to evaluate emerging capabilities and influence technology priorities while protecting Micron intellectual property
Support the transition of successful pathfinding concepts into technology development and production by documenting key learning, technical assumptions, risks, and recommendations
Requirements
Master’s degree in Electrical Engineering, Physics, Materials Science, Chemical Engineering, or a related technical field
Nice to have: Ph.D. in Electrical Engineering, Physics, Materials Science, or related field
Nice to have: experience with DRAM technology development
Lead early-stage technology investigation and process integration for next-generation DRAM architectures.
Compensation
$159,000.00 - $271,000.00 a year
Responsibilities
Lead pathfinding investigations of next-generation DRAM concepts, materials, process architectures, and advanced patterning solutions, including High-NA EUV
Develop and integrate process flows across lithography, dry etch, thin films, CMP, metrology, device engineering, and manufacturing while balancing performance, yield, reliability, manufacturability, and cost
Design and implement DOE and technology-learning experiments, using statistical and AI-assisted analytics to evaluate electrical, defectivity, metrology, reliability, and yield data
Collaborate with NY CREATES, equipment suppliers, research partners, and Micron teams to evaluate emerging capabilities and influence technology priorities while protecting Micron intellectual property
Support the transition of successful pathfinding concepts into technology development and production by documenting key learning, technical assumptions, risks, and recommendations
Requirements
Master’s degree or equivalent experience in Electrical Engineering, Physics, Materials Science, Chemical Engineering, or a related technical field
Nice to have: Ph.D. or equivalent experience in Electrical Engineering, Physics, Materials Science, or a related field
Nice to have: Experience with DRAM technology development
DRAM Pathfinding & Process Integration EngineerNewMicron Technology · Remote, US