- San Jose, California, United States
- $250K–$250K per year
- 10+ years
Lead the design and development of custom circuits for high-speed and low-power SRAM and low-power configuration RAM (CRAM) and manage the full embedded memory design flow.
Compensation
Base Pay Range 250,000.00 In addition to base pay, this role may be eligible for variable/ incentive compensation and/ or equity.
Responsibilities
- Design and develop custom memory circuits
- Develop memory architectures in advanced semiconductor technologies
- Perform schematic capture, simulation, and margin verification
- Oversee layout planning and pitch-matched designs
- Collaborate with architecture and design teams on PPA and yield targets
Requirements
- Bachelor’s degree in electrical engineering
- Nice to have: large density memory cell design
- Nice to have: semiconductor device fundamentals