- Folsom, California, United States
- On-site
- Full-time · Principal
- $150K–$308K per year
- 5+ years
Lead the interface between foundry partners and Micron design teams to advance HBM DRAM technology.
Compensation
$150,000.00 - $308,000.00 a year
Responsibilities
- Act as the primary technical interface between foundry partners and Micron design organizations
- Drive closure of design-process gaps through collaborative engagement with foundry process teams
- Influence foundry roadmaps related to TSV, BEOL, reliability, and design enablement
- Define technology requirements for future HBM and custom memory products
- Perform HSPICE simulations for technology evaluation and design optimization
Requirements
- BS, MS, or PhD in Electrical Engineering, Computer Engineering, or related field
- Nice to have: Experience with leading foundries such as TSMC, Samsung, Intel Foundry Services, or GlobalFoundries
- Nice to have: Experience with memory products including DRAM, HBM, or SRAM
- Nice to have: Knowledge of TSV technologies, Advanced packaging, Reliability modeling and aging simulations, Advanced BEOL technologies, PDK development and validation
- Nice to have: Experience leading technology pathfinding and node selection activities