- Richardson, Texas, United States
- 7+ years
Lead technical enablement of novel memories and integration technologies for Micron’s High Bandwidth Memory (HBM) Design Architecture team.
Responsibilities
- Lead architecture and feasibility assessments for emerging memories and advanced integration
- Apply mainstream DRAM/HBM product knowledge to define new technology requirements
- Translate device and process characteristics into product-level requirements
- Identify technology–product gaps and drive de-risking plans
- Partner with process integration, device, packaging, and design teams
Requirements
- BS in Electrical Engineering, Physics, Materials Science, or related field
- MS with 5+ years
- PhD with 3+ years
- Nice to have: PhD or equivalent experience with 10+ years in DRAM/HBM build
- Nice to have: direct experience with vertically coordinated DRAM technologies