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Micron is looking for experienced semiconductor design professionals for their advanced memory design and engineering teams through the Cross-Country Korea Hiring initiative.

Responsibilities

Lead advanced circuit and physical design for high-speed memory datapaths, including HSIO, SerDes, Rx/Tx, DDR/LPDDR, NAND/DRAM PHY, timing optimization, and silicon correlation.
Drive advanced memory interface design for next-generation memory architectures, with focus on TSV, HBM, Wide I/O, high-speed memory interfaces, inter-die timing, power optimization, and 3D-stacked memory technologies.
Own complex designs and work across multiple engineering teams.
Communicate technical trade-offs, progress, and outcomes effectively.

Requirements

BS or MS in Electrical Engineering or a related discipline
Nice to have: AI-assisted tools

Skills

semiconductor circuit design memory design analog/mixed-signal high-speed interface memory datapath

FY27 Micron Korea Overseas Experience Hiring_Japan

Micron Technology · Posted Nov 6, 2026

Open

Tokyo, Tokyo, Japan
8+ years

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Lead advanced circuit and physical design for high-speed memory datapaths and drive advanced memory interface design for next-generation memory architectures.

Responsibilities

Lead advanced circuit and physical design for high-speed memory datapaths
Drive advanced memory interface design for next-generation memory architectures

Requirements

BS or MS in Electrical Engineering or a related discipline
Nice to have: AI-assisted tools

Skills

analog/mixed-signal high-speed interface memory datapath PHY physical circuit design NAND DRAM DDR/LPDDR HBM TSV

TSV jobs

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